By Topic

Study of carrier dynamics in indirect transition-type (Al0.7Ga0.3)0.5In0.5P/AlxIn1-xP superlattices by transient photoluminescence and photocurrent measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ishitani, Yoshihiro ; Faculty of Engineering, Hiroshima University, 1-4-1 Kagamiyama, HigashiHirosihma, Hiroshima, 739-8527, Japan ; Matsuya, Kouhei ; Fujita, Toshiaki ; Nakasa, Keijiro
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1491019 

The time resolved photoluminescence (TRPL) and the time resolved photocurrent (TRPC) are simultaneously measured for undoped (Al0.7Ga0.3)0.5In0.5P/AlxIn1-xP (x=0.53 and 0.57) superlattices. The bias voltage is applied on the semitransparent Au electrode on the epitaxial layer. From the measurement of the sample with x=0.53 (lattice matched to the GaAs substrate), most of the carriers are recombined by nonradiative processes under the bias voltage of +0.3–-1.0 V. The increase of the electric field causes the increase of electron flow from the surface region of the SL and the decrease in PL intensity. From the bias voltage dependence of the TRPL and TRPC properties, the amount of the radiatively recombined carriers are found to be less than 1×109 when 1.4×1011 photons are incident on the sample. The surface electric field of the sample without the electrode is estimated to be less than 3×103 V/cm during the PL measurement. For the sample with x=0.57, the energy states originating from the crystal defects act as the carrier traps under a low-electric field and the levels which contribute to the tunneling of electrons through the potential barriers under a high-electric field. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 4 )