By Topic

Effect of metal–oxide–semiconductor processing on the surface roughness of strained Si/SiGe material

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Olsen, S.H. ; Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, NE1 7RU, United Kingdom ; ONeill, A.G. ; Bull, S.J. ; Woods, N.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The impact of metal–oxide–semiconductor processing on strained Si/SiGe device structures has been examined. Material was grown by gas-source molecular beam epitaxy and ultra low pressure chemical vapor deposition, with different as-grown surface roughness. The effects of RCA cleaning, gate oxidation and rapid thermal annealing on this material were studied by atomic force microscopy (AFM) and optical profilometry. Certain processes caused reactions common to both material types, whereas others yielded dissimilar responses. Filtering AFM roughness data of specific wavelengths enabled the effects of processing on large-scale surface roughness dominated by the cross-hatching morphology and smaller scale microroughness to be investigated. The results suggest that as-grown Si/SiGe material quality is not a good indicator of processed device performance, rather morphological changes which occur during processing must be considered. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 3 )