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Dissociation of nitrogen-oxygen complexes by rapid thermal anneal heat treatments

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3 Author(s)
Libbert, J.L. ; MEMC Electronic Materials, 501 Pearl Drive, St. Peters, Missouri 63376 ; MuleStagno, L. ; Banan, M.

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Float zone silicon melt doped or implanted with nitrogen exhibits absorption bands in the midinfrared range that are caused by localized vibration modes of nitrogen pairs. Czochralski-grown silicon crystals melt doped with nitrogen exhibit both these lines and additional absorption lines related to the interaction of nitrogen with oxygen to form nitrogen-oxygen complexes. The stability of these complexes is studied by subjecting silicon samples containing these complexes to rapid thermal heat treatments at several temperatures and for varying times and monitoring the relative absorption by the complexes and the nitrogen pairs. We have found that the complexes begin to dissociate rapidly for temperatures above 700 °C but they are still present to some extent even after anneals at temperatures as high as 1200 °C. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 3 )