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CoSi2 formation in the presence of carbon

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6 Author(s)
Detavernier, C. ; Vakgroep Vaste-stofwetenschappen, Universiteit Gent, Krijgslaan 281/S1, B-9000 Gent, Belgium ; Van Meirhaeghe, R.L. ; Bender, H. ; Richard, O.
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Silicide formation was studied for Co/C/Si and C/Co/Si bilayers. Phase formation and preferential orientation of the CoSi2 phase is strongly dependent on the C layer thickness. For thin interlayers and capping layers, CoSi2 nucleation is delayed to higher temperature and epitaxially aligned nuclei are formed preferentially. To explain these findings, we propose a model based on heterogeneous nucleation theory: C is present as a contaminant in the CoSi and is able to influence CoSi2 nucleation by enhancing the CoSi grain-boundary cohesion and reducing grain-boundary diffusion. For thicker interlayers (≫1 nm), the carbon acts as a diffusion mediating interlayer, and epitaxial CoSi2 is formed by slow outdiffusion of Co from an amorphous Co–C alloy. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 3 )

Date of Publication:

Aug 2002

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