By Topic

Ions in holes: An experimental study of ion distributions inside surface features on radio-frequency-biased wafers in plasma etching discharges

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Woodworth, J.R. ; Sandia National Laboratories, Albuquerque, New Mexico 87185-1193 ; Miller, P.A. ; Shul, R.J. ; Abraham, I.C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We present an experimental study of ion fluxes, energy distributions, and angular distributions inside surface features on radio frequency-biased wafers in high-density, inductively driven discharges in argon. Specifically, we present data on ion distributions at the bottom of 100-μm-square, 400-μm-deep “holes” in the wafer. Transmission of ions to the bottom of the holes increases with increasing ion energy and decreases as the sheath size becomes comparable to the hole size. Ion energy distributions at the bottom of the holes are narrower than distributions on the flat wafer surface. The flux of ions remains normal to the wafer surface over most of the hole area but the flux of ions within 6 μm of the wall is angled towards the wall. The observed trends are consistent with effects expected due to bowing of the plasma sheath around the surface features on the wafer. Scattering of ions off sidewalls contributes at most, only a small part of the ion flux reaching the bottom of the hole. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 2 )