By Topic

Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chaldyshev, V.V. ; Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210 ; Pollak, Fred H. ; Pophristic, M. ; Guo, S.P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1519342 

Using micro-Raman spectroscopy we have investigated the n dopant and strain distribution in lateral epitaxial overgrowth technique GaN films grown by metalorganic chemical vapor deposition on the sapphire (0001) substrates with SiNx masks. The widths of the mask stripes were 2, 4, 8, or 16 μm, while the mask windows were always 4 μm wide. In the case of narrow stripes (2 and 4 μm), when the overgrowth wings were well coalesced, the films were found to be fairly uniform with a background n doping of (4±2)×1017cm-3. The GaN wings in the samples with 8 and 12 μm stripes did not coalesce, leaving “V”-shaped and trapezoidal grooves, respectively. In the latter case, additional doping [n=(6.5±0.6)×1017cm-3] of the wing area was revealed, which may be due to surface diffusion of Si atoms from the SiNx mask to the GaN growth front and their incorporation into the growing film. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 11 )