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β-FeSi2 formation on MOCVD Fe/Si(100) by solid phase epitaxy

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3 Author(s)
Chen Hao ; Dept. of Phys., Nanjing Univ., China ; Han Ping ; Zheng Youdou

In this paper we report for the first time the solid phase epitaxy of β-FeSi2 films using Fe/Si(100) heterostructures obtained by MOCVD. The formation process of the β-FeSi2 thin films involves the deposition of iron on Si(100) by MOCVD and subsequent annealing. The single-crystal structure of Fe film on Si(100) before annealing was revealed by X-ray diffraction and electron microscopy. After annealing, the synthesis of β-FeSi2 film is identified by X-ray diffraction

Published in:

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Date of Conference:

24-28 Oct 1995