Cart (Loading....) | Create Account
Close category search window
 

Effect of plasma and thermal annealing on optical and electronic properties of SnO2 substrates used for a-Si solar cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Hegedus, Steven S. ; Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1481192 

The sensitivity to various types of annealing treatments of three commercially available textured SnO2 substrate materials was investigated using optical transmission and Hall effect measurements. The treatments included H2 plasma and annealing in H2/Ar, Ar, or air from 100 to 400 °C. With both types of H2 treatments, the mobility of the SnO2 having the lowest carrier density (≪2×1020cm-3) doubles from ∼30 to ∼60 cm2/Vs while the mobilities of SnO2 materials having a higher carrier density were unaffected. There was no significant change in carrier density with either treatment for any SnO2. The visible transmission degrades significantly with H2 plasma at 200 °C but it is unaffected by H2/Ar annealing up to 400 °C. A 20 nm layer of sputtered ZnO is sufficient to protect the SnO2 from plasma-induced damage while still allowing the factor of 2 improvement in SnO2 mobility. The resistivity of bare SnO2 can be decreased by a factor of 2 without any loss of transmission using H2/Ar or Ar annealing at 400 °C without a protective ZnO layer. The changes were stable over 2 years of storage in air. Results are consiste- nt with thermal desorption of oxygen from grain boundaries in a reducing ambient. An optimum SnO2 product for superstrate a-Si solar module fabrication should be deposited with a low carrier density, ≪2×1020cm-3, then annealed in H2/Ar or Ar at 300–400 °C to increase the mobility without increasing the absorption losses. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:92 ,  Issue: 1 )

Date of Publication:

Jul 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.