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Compositionally graded hafnium silicate studied by chemically selective scanning tunneling microscopy

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2 Author(s)
Lee, Jung-Ho ; Joint Research Center for Atom Technology, AIST Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-0046, Japan and Memory R&D Division, Hynix Semiconductor Inc., Ichon, Kyoungki 467-701, Korea ; Ichikawa, Masakazu

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Taking a tradeoff between channel carrier mobility and overall k value into account, compositionally graded ultrathin (1–2 nm) hafnium silicate has been investigated and suggested as an interfacial layer for an alternative high-permittivity (high-k) gate dielectric. Attempts to confirm whether a compositional gradation could occur in such a thin thickness range were performed by thermal annealing of 1-ML-thick Hf deposited on 1-nm-thick SiO2 in an ultrahigh vacuum chamber. Compositionally graded features varying from topmost HfOx-like to SiO2-like at the interface with Si could be analyzed with subnanometer resolution by scanning tunneling microscopy utilizing a local variation in the position of the conduction-band minimum within the insulator band gap as an identifier. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 9 )

Date of Publication:

May 2002

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