By Topic

Study of terahertz radiation from InAs and InSb

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Gu, Ping ; Kansai Advanced Research Center, Communications Research Laboratory 588-2 Iwaoka, Kobe 651-2492, Japan ; Tani, M. ; Kono, Shunsuke ; Sakai, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Terahertz radiation from InSb and InAS, which are typical narrow band-gap semiconductors, was investigated using time-resolved THz emission measurements. When we compared between the polarity of the THz waveforms of these narrow band-gap semiconductors with that of InP, which is a wide bandgap semiconductor, we concluded that the ultrafast buildup of the photo-Dember field is the main mechanism for the emission of THz radiation in both InAs and InSb. The emission efficiency of InSb is approximately one-hundredth of that of InAs, although the electron mobility in InSb is higher than in InAs. Wavelength-dependent measurements implied that the anomalously low THz emission efficiency of InSb might be due to a reduction in transient mobility resulting from the scattering of electrons into the low-mobility L valley. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 9 )