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Origin of transconductance oscillations in silicon-on-insulator metal–oxide–semiconductor field-effect transistors with an ultrathin 6-nm-thick active Si layer

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6 Author(s)
Ueno, H. ; Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama, Higashi-Hiroshima, 739-8526, Japan ; Tanaka, M. ; Morikawa, K. ; Takahashi, T.
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Transconductance oscillations were observed for silicon-on-insulator metal–oxide–semiconductor field-effect transistors with 50 nm channel length and 6 nm Si-layer thickness in the temperature range of 39–50 K. By investigating the temperature dependence of the oscillations it was found that the oscillations were caused by two reasons. One reason is the roughness at the Si/insulator interface responsible for the low-gate-voltage oscillations. The roughness results in different thicknesses of the Si layer along the channel, causing different quantized energy levels, which act as barriers for carriers moving in the channel. The other reason is the tunneling through the potential barrier at the p/n junctions between the contacts and the channel, which is responsible for the high-gate-voltage oscillations. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 8 )

Date of Publication:

Apr 2002

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