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Erratum: “AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy” [J. Appl. Phys. 90, 5196 (2001)]

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10 Author(s)
Smorchkova, I.P. ; Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106 ; Chen, L. ; Mates, T. ; Shen, L.
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Journal of Applied Physics  (Volume:91 ,  Issue: 7 )