Cart (Loading....) | Create Account
Close category search window

Dependence of band gap energy shift of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering on stoichiometry of SiOx and SiNx capping layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Jae Su Yu ; Department of Information and Communications, Kwangju Institute of Science and Technology, Kwangju 500-712, Korea ; Jin Dong Song ; Lee, Yong Tak ; Lim, H.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have investigated the effects of the stoichiometry of SiOx and SiNx capping layers on the band gap energy shift induced by impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiple quantum well structures. The stoichiometry of the SiOx and SiNx capping layers was changed by varying the flow rate of silane (SiH4) gas, and argon gas was employed as the carrier gas of the diluted SiH4 gas to eliminate any possible incorporation of nitrogen into the deposited film when nitrogen gas is employed as the carrier gas. A blueshift of photoluminescence peak of up to 112 meV is observed after rapid thermal annealing at 950 °C for 50 s from the sample capped with SiOx (provided with a SiH4 flow rate of 20 sccm). It is observed that the magnitude of the blueshift increases with the decrease of SiH4 flow rate for the SiOx and SiNx capping layer because of the increased porosity of dielectric capping layers. The insertion of intermediate GaAs cap layer reduces the band gap energy shift irrespective of the SiOx or SiNx capping layer. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 7 )

Date of Publication:

Apr 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.