Microstructure of laser-crystallized silicon thin films on glass substrate

We investigate the microstructure of polycrystalline silicon films (grain size, orientation distribution, and grain boundary population). These films are produced by laser crystallization of amorphous silicon on glass substrates by a frequency doubled Nd:YVO₄ laser operating at a wavelength of 532 nm. Transmission electron microscopy reveals that the grains have an average width between 0.25 and 5 μm depending on the crystallization parameters and a length of several 10 μm. Electron backscattering diffraction experiments show that the grain orientation of the poly-Si films is textured. Type and extent of texture depend in a complex way on the thickness of the crystallized amorphous silicon layer, on the repetition rate of the laser pulses, and on whether or not an additional buffer layer is present on the glass substrate. In any case, the grain boundary population is dominated by first and second order twin boundaries. © 2002 American Institute of Physics.