Scanning force microscopy of domain structures in Pb(Zn_1/3Nb_2/3)O₃-8% PbTiO₃ and Pb(Mg_1/3Nb_2/3)O₃-29% PbTiO₃

Domain structures of unpoled as well as poled (along [001]- and [110]-direction) Pb(Zn_1/3Nb_2/3)O₃ (PZN)-8% PbTiO₃ (PT) and Pb(Mg_1/3Nb_2/3)O₃ (PMN)-29% PT single crystals have been investigated by scanning force microscopy (SFM) in the piezoresponse mode, at room temperature. Antiparallel domain structures have been detected mostly in unpoled crystals of both materials, with a fingerprint pattern in (001)-oriented PZN-8% PT crystal. The ferroelastic domain wall has been identified in poled (110)-oriented PZN-8% PT crystal. “Writing” of ferroelectric domains has been performed by applying a dc voltage to the SFM tip. Local re-poling has been observed for all unpoled as well as for poled (001)-oriented crystals at the voltage ±60 V. Local electrical switching was successful in poled (110)-oriented PMN-29% PT at higher voltage (±120 V) but was not successful in poled (110)-oriented PZN-8% PT crystal. Domain-engineered crystals poled in [110]-direction seem to exhibit more stable (in the sense of local re-poling properties) domain arrangement. Hysteretic d(E) dependencies were observed by local application of an ac voltage. © 2002 American Institute of Physics.