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Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors

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3 Author(s)
Valenza, M. ; CEM2-UMR CNRS 5507-Université Montpellier II, Place Eugène Bataillon, 34095 Montpellier cedex 5, France ; Vildeuil, J.C. ; Rigaud, D.

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Conduction and low frequency channel noise of gallium–arsenide (GaAs) based pseudomorphic high electron mobility transistors are investigated. The following analysis takes into account both the noise source associated with the intrinsic part of the device and the sources located within the access path. In order to discriminate between these two noise origins, a model of the transistor conduction is proposed using only a few parameters which are easily extracted. It is shown that the intrinsic channel noise agrees with Hooge’s model with αH parameter about 3×10-4 for the studied technology. Moreover, the values of the access resistances are an important parameter to describe correctly the conduction and the noise behaviors. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 5 )

Date of Publication:

Mar 2002

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