By Topic

Large-grain polycrystalline silicon films with low intragranular defect density by low-temperature solid-phase crystallization without underlying oxide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Bo, Xiang-Zheng ; Center for Photonics and Opti-Electronic Materials, Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 ; Yao, Nan ; Shieh, Sean R. ; Duffy, Thomas S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1448395 

The solid-phase crystallization of an amorphous silicon film to polycrystalline silicon by a low-temperature (≤600 °C) furnace anneal has been investigated in a suspended cantilever structure without underlying silicon oxide by transmission electron microscopy and Raman spectroscopy. The grain size of polysilicon increases up to ∼3.0 μm and the density of intragranular defects decreases one order of magnitude in the samples without underlying oxide, compared with those with underlying oxide. The main reasons for the high quality of the suspended structures are thought to be due to the lower stress in the films during crystallization and a reduced grain nucleation rate. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 5 )