Cart (Loading....) | Create Account
Close category search window

Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Liu, Day-Shan ; Institute of Optical Sciences, National Central University, Chung-Li 32054, Taiwan, Republic of China ; Lee, Ching-Ting

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The thermal degradation mechanism of Cu/Au contacts to the InGaP layer has been investigated using current–voltage measurement, x-ray diffractometry (XRD) measurement and cross-sectional transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS). The diffraction peaks of Cu, Au, and InGaP could be observed from the XRD measurement and an evident interface of Cu/InGaP also could be found from the cross-sectional microstructure. The apparent interface of Cu/InGaP was responsible for the high performance of Cu/Au Schottky contacts to the InGaP layer. The thermal stability endurance for the high performance of the Schottky contact can be maintained up to 450 °C. However, the Schottky contact performance became inferior at temperatures higher than 450 °C. At a temperature of 500 °C, the peaks of Cu and Au disappeared, the XRD measurement revealing the diffraction peaks of CuP2 and Cu3Au2 alloys. According to the cross-sectional microstructure and the EDS measurements at 500 °C, the Cu layer had been released, penetrated into the InGaP layer, and outdiffused to the Au layer to form an intermetallic layer. As a result, the thermal degradation mechanism is attributed to the release of the Cu layer and the indiffusion of Cu element to the InGaP layer. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 3 )

Date of Publication:

Feb 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.