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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:91 Issue:2 Help

Structural and thermoelectric transport properties of Sb2Te3 thin films grown by molecular beam epitaxy

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6 Author(s)
Kim, Yunki ; Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 ; DiVenere, A. ; Wong, George K.L. ; Ketterson, J.B.
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We have studied the structural and transport properties of Sb2Te3 thin films prepared by molecular beam epitaxy as a function of the Te/Sb flux ratio during deposition. Both the crystallinity and the transport properties are found to be strongly affected by nonstoichiometry. The most stoichiometric sample (prepared with a Te/Sb ratio of 3.6) had a high degree of crystallinity, high thermopower, and high carrier mobility. However, Sb2Te3 films with excess Sb or Te had poorer crystallinity, reduced magnitude of the thermopower, and reduced mobility as a result of the formation of antisite defects. These antisite defects were able to be reduced by controlling the relative flow rate ratio of Te to Sb during growth. © 2002 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:91 ,  Issue: 2 )

Date of Publication: Jan 2002

Page(s):
715 - 718
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.1424056
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jan 2002

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