By Topic

Film structure dependence of the magnetoresistive properties in current perpendicular to plane spin valves and its relation with current in plane magnetoresistive properties

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hosomi, Masanori ; MR Development Department, CNC, Sony Corporation, Miyagi 985-0842, Japan ; Makino, E. ; Konishiike, I. ; Sugawara, N.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1451885 

The magnetoresistive properties of current perpendicular to plane (CPP) spin valves (SV) were investigated for various film structures. CPP-SV elements were fabricated by photolithography and ion-beam etching. As an unexpected result, resistivity change-area product (dRA) improved up to 60% with increasing the PtMn layer thickness from 20 to 40 nm in the bottom synthetic spin valve structure, even though the PtMn layer cannot contribute to the spin dependent scattering. For the free layers, dRA improved with increasing the free layer thickness, although a saturation magnetization (Ms) and free layer thickness were restricted for the head application. Aiming at the enhancement of the spin dependent scattering on the interface, CoFe/NiFe multilayer is adopted as the free layer. Although NiFe improves dR, dRA was not improved with increasing the number of interfaces between CoFe and NiFe when total thickness is kept constant. It also becomes clear that NiFe is the appropriate material in terms of the bulk scattering point of view, although the combination with CoFe at the interface with the Cu spacer is required to avoid intermixing. Dual synthetic spin valve showed better properties, and a dRA of 3.0 mΩ μm2 was obtained. Since the fabrication of CPP elements requires a time-consuming process, it is desirable to predict the CPP properties in the CIP mode. Although the simple comparison between dR in the CPP mode and conductance change (dG) in the CIP mode through experimental results was attempted, it was recognized that further considerable arrangements were necessary. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 10 )