By Topic

Analysis of growing mechanism for MnSb epitaxial films fabricated on a Si substrate by dc sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Ashizawa, Y. ; Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan ; Saito, S. ; Takahashi, Migaku

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The epitaxial growth and the formation of an interface layer for MnSb sputtered films fabricated on Si (111) single crystal substrates was investigated. It was found that (1) at Tsub=200 °C, MnSb grains grew epitaxially with (101) orientation as the dominant crystal orientation on a Si (111) substrate and (2) at Tsub=250 °C (a) in the thickness region from 0 to 70 nm, a MnSi reacted layer was formed and grown epitaxially with (111) orientation, (b) in the thickness region over 70 nm, MnSb grains were formed and grown epitaxially with c-plane orientation on the MnSi interface layer. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 10 )