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Light emitting real-space transfer devices fabricated with strained GaAs/In0.2Ga0.8As/AlGaAs heterostructures

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3 Author(s)
Lai, J.-T. ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu ; Yeh, Y.-H. ; Lee, J.Y.

Light emitting devices based on real-space electron transfer are implemented with strained GaAs/InGaAs/AlGaAs heterostructures on GaAs substrates. Both GaAs channel and In0.2Ga0.8As channel devices are fabricated. The device energy band diagrams are simulated by using the MEDICI program. The optical measurement shows that the photocurrent on/off ratio of InGaAs channel devices is better than that of GaAs channel devices

Published in:

Electronics Letters  (Volume:32 ,  Issue: 11 )

Date of Publication:

23 May 1996

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