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Effects of nitrogen on GaAsP light-emitting diodes

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2 Author(s)
Sato, Tadashige ; Mitsubishi Chemical Corporation, 1000 Higashimamiana, Ushiku, Ibaraki 300-1295, Japan ; Imai, Megumi

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The effects of nitrogen on GaAsP light-emitting diodes grown by hydride vapor phase epitaxy are described. Nitrogen acts as an isoelectronic trap and this localized state makes GaAsP a widely used material for from-yellow-to-red visible light-emitting diodes. The photoluminescence and electroluminescence spectra, brightness, and reliability were investigated systematically in line with the function of nitrogen concentration, from 0 (without nitrogen) to 2.3×1019 cm-3. When the nitrogen concentration reached 2.3×1019 cm-3, the total emission in the photoluminescence spectrum at 4.2 K showed a redshift. The study provides clarification of the effects of nitrogen on the diodes and demonstrates that the characteristics of the diodes strongly depend on the nitrogen concentration. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 10 )

Date of Publication:

May 2002

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