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InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

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6 Author(s)
Egawa, T. ; Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan ; Zhang, B. ; Nishikawa, N. ; Ishikawa, H.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1408264 

We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 °C. © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 1 )

Date of Publication:

Jan 2002

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