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Influence of gas transport on the oxidation rate of aluminum arsenide

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4 Author(s)
Cich, M.J. ; Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, California 94720 ; Zhao, R. ; Anderson, Erik H. ; Weber, E.R.

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The effect of gas transport on the lateral oxidation kinetics of aluminum arsenide has been studied by limiting the gas transport to the gas–oxide interface using closely spaced mesas. At 440 °C the gas transport factor is found to be 8.5±1.3 times the reaction rate coefficient, resulting in a measurable decrease in oxidation rate for mesas closer than 200 nm. This confirms the usual assumption that the initial oxidation rate is limited by the reaction kinetics at the oxidizing interface and not the gas transport for normal oxidation conditions © 2002 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:91 ,  Issue: 1 )