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High speed, high efficiency resonant-cavity enhanced InGaAs MSM photodetectors

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5 Author(s)
Strittmatter, A. ; Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany ; Kollakowski, S. ; Droge, E. ; Bottcher, E.H.
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Resonant-cavity-enhanced In/InGaAs metal-semiconductor-metal photodetectors designed for 1.31 μm wavelength illumination are demonstrated. The bottom mirror microcavity consists of an InGaAlAs/InAlAs buried Bragg reflector, and the top mirror comprises the interdigitated contact metallisation and a Si/SiNx quarter wave stack deposited on the surface. An external quantum efficiency of 77%, and a 3 dB bandwidth of 10 GHz, are achieved with an InGaAs absorber thickness of 300 nm

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Electronics Letters  (Volume:32 ,  Issue: 13 )