Cart (Loading....) | Create Account
Close category search window

Fluorine incorporation into gate stacks of advanced silicon memory technologies: Simulation, depth distribution, and reliability

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kruger, D. ; IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany ; Dabrowski, J. ; Gaworzewski, P. ; Kurps, R.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Fluorine segregation influences the intrinsic reliability of thin gate oxides in poly-Si/SiO2/Si structures. We analyze diffusion and segregation kinetics of F in gate stacks with 5 nm gate oxides using secondary ion mass spectroscopy. Well defined doses of F were introduced by ion implantation. We find that F segregation at interfaces to the gate oxide is diffusion limited with an effective activation energy of 1.4 eV. For F concentrations lower than 5×1015cm-2, F segregation is beneficial improving, for example, the tails of the Weibull plots and slightly increasing the breakdown field. For F doses higher than 1×1016cm-2, detrimental consequences were found, degrading the charge to breakdown values by about a factor of 5 after long-term thermal treatments. From ab initio density functional theory pseudopotential calculations for atomic structures and total energies of segregated F, we conclude that the segregation to the interface is driven mainly by the energy difference between Si–O and Si–Si bonds in the interfacial region, by oxygen assisted strain relaxation around Si atoms attacked by F and, possibly, by kinetic bottlenecks in diffusion of network oxygen through SiO2. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:90 ,  Issue: 7 )

Date of Publication:

Oct 2001

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.