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Highly sensitive recognition element based on birefringent porous silicon layers

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6 Author(s)
Gross, E. ; Physik-Department E16, Technische Universität München, D-85747 Garching, Germany ; Kovalev, D. ; Kunzner, N. ; Timoshenko, V.Yu.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1391417 

Anisotropically nanostructured silicon layers exhibit a strong in-plane birefringence. Their optical anisotropy parameters are found to be extremely sensitive to the presence of dielectric substances inside of the pores. Polarization-resolved transmittance measurements provide an extremely sensitive tool to analyze the adsorption of various atoms and molecules in negligible quantities. A variation of the transmitted linearly polarized light intensity up to two orders of magnitude combined with a fast optical response in the range of seconds make these layers a good candidate for sensor applications. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:90 ,  Issue: 7 )

Date of Publication:

Oct 2001

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