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Monolithic integration of In0.2Ga0.8As vertical-cavity surface-emitting lasers with resonance-enhanced quantum well photodetectors

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5 Author(s)
Ortiz, G.G. ; Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA ; Hains, C.P. ; Cheng, J. ; Hou, H.Q.
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Vertical-cavity surface-emitting lasers (VCSELs) have been monolithically integrated with resonance-enhanced photo-detectors (REPDs) using a single epilayer design, to produce a simple array of sources and detectors for optical interconnect applications. The detectors, which contain a three quantum well InGaAs absorption region, achieve quantum efficiencies as high as 85%, and the VCSELs achieved threshold current densities as low as 850 A/cm2 and differential quantum efficiencies as high as 50%

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Electronics Letters  (Volume:32 ,  Issue: 13 )