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Dependence of threshold current density, carrier lifetime and optical gain coefficient on donor concentration in 1.3 μm n-type modulation-doped strained multiquantum well lasers

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4 Author(s)
Nakahara, K. ; Central Res. Lab., Hitachi Ltd., Tokyo ; Uomi, K. ; Tsuchiya, T. ; Niwa, A.

The dependence of lasing properties on the donor concentration is experimentally investigated for 1.3 μm n-type modulation-doped (MD) strained multiquantum well (MQW) lasers. The threshold current density has a minimum at a donor concentration of 3×1018 cm-3: the carrier lifetime and the optical gain coefficient decrease with the donor concentration. The turn-on delay time of 100 ps can be expected at 85°C when the MD-MQW structure is applied to a low-leakage buried heterostructure laser

Published in:

Electronics Letters  (Volume:32 ,  Issue: 13 )