We have measured the low-frequency voltage noise properties across mesa stacks of intrinsic Josephson junctions in Bi2Sr2CaCu2Oy (BSCCO) single crystals as a function of bias voltage. The BSCCO mesas with area of 160×40 μm2 were fabricated on the surface of cleaved BSCCO single crystals using standard photolithography and Ar ion-milling techniques. The measured noise voltage spectrum density SV(f ) had a 1/f dependence on frequency. The magnitude of the 1/f noise spectra was found to increase monotonically with the branch number in the I–V characteristic at fixed bias current, and no anomalously enhanced 1/f noise was observed. © 2001 American Institute of Physics.