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3 V low noise amplifier implemented using a 0.8 μm CMOS process with three metal layers for 900 MHz operation

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5 Author(s)
Y. -C. Ho ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA ; M. Biyani ; J. Colvin ; C. Smithhisler
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A 3 V CMOS low noise amplifier (LNA) was implemented in a 0.81 μm CMOS process. This is the first CMOS amplifier which integrates input and output matching networks and integrated inductors formed using a conventional process. The LNA achieves a power gain of 14.3 dB and a noise figure of 4.5 dB, with a centre frequency of 820 MHz

Published in:

Electronics Letters  (Volume:32 ,  Issue: 13 )