By Topic

Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Kangguo Cheng ; Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, 405 N. Mathews Avenue, Urbana, Illinois 61801 ; Hess, K. ; Lyding, Joseph W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1412265 

The kinetics for the replacement process of hydrogen by deuterium at the (100)Si/SiO2 interface is studied. Metal–oxide–semiconductor devices were initially annealed in hydrogen and then reannealed in deuterium at various temperatures for various durations. The deuterium concentration CD, defined as the percentage of interface defects passivated by deuterium, was then determined by a technique that is solely based on electrical measurements. From fundamental kinetics, activation energy E for replacing hydrogen by deuterium at the (100)Si/SiO2 interface is determined to be 1.84 eV. This result suggests that the replacement of hydrogen by deuterium involves a process of the dissociation of molecular deuterium at the interface. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:90 ,  Issue: 12 )