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Strain-induced insulator–metal transition and room-temperature colossal magnetoresistance in low-doped La1-xBaxMnO3 thin films

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3 Author(s)
Zhang, Jun ; Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan ; Tanaka, Hidekazu ; Kawai, T.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1416866 

Magnetotransport properties in low-doped La1-xBaxMnO3 thin films were investigated. The bulk La1-xBaxMnO3 (x=0.05 and 0.1) compounds are insulating, but an insulator–metal transition was observed in the strained thin films deposited on SrTiO3(100) substrates. At x=0.05, magnetization measurements revealed a transition from spin canting in bulk to ferromagnetic order in thin film. Moreover, a large magnetoresistance effect was obtained in the thin film with x=0.1 at room temperature and in a low magnetic field. A strain-induced modification of eg orbital stability was proposed to explain these properties. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:90 ,  Issue: 12 )

Date of Publication:

Dec 2001

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