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Growth of epitaxial CoSi2 on 6H-SiC(0001)Si

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5 Author(s)
Platow, W. ; Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 ; Nemanich, R.J. ; Sayers, D.E. ; Hartman, J.D.
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Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-free 6H-SiC(0001)Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550 °C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy. © 2001 American Institute of Physics.

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Journal of Applied Physics  (Volume:90 ,  Issue: 12 )