Cart (Loading....) | Create Account
Close category search window
 

Scanning tunneling microscope study of boron-doped highly oriented pyrolytic graphite

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Endo, Morinobu ; Faculty of Engineering, Department of Electrical and Electronic Engineering, Shinshu University, Wakasato 4-17-1, Nagano 380-8553, Japan ; Hayashi, Takuya ; Hong, Seong-Hwa ; Enoki, Toshiaki
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1409581 

Atomically resolved scanning tunneling microscopy (STM) results are shown for substitutionally doped boron atoms in the hexagonal carbon network of highly oriented pyrolytic graphite (HOPG). STM images of boron-doped HOPG reveal not only a clear change in the electronic structure of the surface graphene network, but also one that directly affects the electronic structure of the graphene layer from the HOPG surface which is very exceptional for STM measurements. The boron atom site in the graphene network appears as the brightest area in the image including the six adjacent carbon atoms which have relatively higher intensity than normal carbon atoms in the STM image. The average boron-to-boron distance in the basal plane is consistent with Raman spectroscopy results. These structural results suggest that the graphite planes can be tailor made both atomically and electronically, and that boron doping can contribute to controlling the properties of the hexagonal carbon network in order to modify its properties relative to those of ideal graphite. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:90 ,  Issue: 11 )

Date of Publication:

Dec 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.