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AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

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10 Author(s)
Smorchkova, I.P. ; Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106 ; Chen, L. ; Mates, T. ; Shen, L.
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We report on an extensive study of the two-dimensional electron gas (2DEG) structures containing AlN layers. It is shown that the presence of large polarization fields in the AlN barrier layer in AlN/GaN heterostructures results in high values of the 2DEG sheet density of up to 3.6×1013 cm-2. Room-temperature sheet resistance of 180 Ω/◻ is demonstrated in the AlN/GaN structure with a 35 Å AlN barrier. As a result of reduced alloy disorder scattering, low-temperature electron mobility is significantly enhanced in AlN/GaN heterostructures in comparison to AlGaN/GaN structures with similar values of the 2DEG sheet density. The growth of GaN cap layers on top of AlN/GaN structures with relatively thick (∼35 Å) AlN barriers is found to lead to a significant decrease in the 2DEG sheet density. However, inserting a thin (∼10 Å) AlN layer between AlxGa1-xN and GaN in the AlxGa1-xN/GaN (x∼0.2–0.45) 2DEG structures does not affect the 2DEG sheet density and results in an increase of the low-temperature electron mobility in comparison to standard AlGaN/GaN structures. At room temperature, a combination of the high 2DEG sheet density of 2.15×1013 cm-2 and high electron mobility of 1500 cm2/V s in Al0.37Ga0.63N/AlN/GaN yielded a low sheet resistance value of 194 Ω/◻. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:90 ,  Issue: 10 )