By Topic

Raman scattering study of (GaAs)1-x(Si2)x alloys epitaxially grown on GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Rodrı guez, A.G. ; Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosı´, Álvaro Obregón 64, 78000, San Luis Potosı´, San Luis Potosı´, México ; Navarro-Contreras, H. ; Vidal, M.A.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

(GaAs)1-x(Si2)x metastable alloys grown on (001), (110), (112), and (111) GaAs substrates, with Si fractions in the range 0≤x≤0.43, were studied by Raman scattering. Two modes near the LO and TO modes of GaAs, besides two local modes associated either with Si–As or Si–Ga and Si–Si bonds, are observed in the Raman spectra. The ratio of integrated intensities of TO-like and LO-like modes (ITO/ILO) is used to evaluate the short range order. It is observed that the zinc blende to diamond transition reported in the literature for these alloys does not influence the Si fraction dependence of the short range order. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:90 ,  Issue: 10 )