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Effects of BaBi2Ta2O9 thin buffer layer on crystallization and electrical properties of CaBi2Ta2O9 thin films on Pt-coated silicon

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4 Author(s)
Kato, Kazumi ; National Industrial Research Institute of Nagoya, 1 Hirate-cho, Kita-ku, Nagoya 462-8510, Japan ; Suzuki, Kazuyuki ; Nishizawa, Kaori ; Miki, Takeshi

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Non-c-axis oriented CaBi2Ta2O9 (CBT) thin films have been successfully deposited via the triple alkoxide solution method on Pt-coated Si substrates by inserting BaBi2Ta2O9 (BBT) thin buffer layers. The BBT thin buffer layer, which was prepared on Pt-coated Si, was a key material for suppression of the nonpolar c-axis orientation and promoting the ferroelectric structure perpendicular to the in-plane direction of CBT thin film. The annealing temperature and thickness of the BBT thin buffer layers affected the dielectric, ferroelectric, and fatigue properties of the stacked CBT/BBT thin films. The resultant 650 °C annealed CBT/BBT(30 nm) thin film exhibited good P–E hysteresis properties and fatigue behaviors. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 9 )