By Topic

Effects of BaBi2Ta2O9 thin buffer layer on crystallization and electrical properties of CaBi2Ta2O9 thin films on Pt-coated silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kato, Kazumi ; National Industrial Research Institute of Nagoya, 1 Hirate-cho, Kita-ku, Nagoya 462-8510, Japan ; Suzuki, Kazuyuki ; Nishizawa, Kaori ; Miki, Takeshi

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Non-c-axis oriented CaBi2Ta2O9 (CBT) thin films have been successfully deposited via the triple alkoxide solution method on Pt-coated Si substrates by inserting BaBi2Ta2O9 (BBT) thin buffer layers. The BBT thin buffer layer, which was prepared on Pt-coated Si, was a key material for suppression of the nonpolar c-axis orientation and promoting the ferroelectric structure perpendicular to the in-plane direction of CBT thin film. The annealing temperature and thickness of the BBT thin buffer layers affected the dielectric, ferroelectric, and fatigue properties of the stacked CBT/BBT thin films. The resultant 650 °C annealed CBT/BBT(30 nm) thin film exhibited good P–E hysteresis properties and fatigue behaviors. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 9 )