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Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy

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4 Author(s)
Kim, J.H. ; Department of Information and Communications, Kwangju Institute of Science and Technology (K-JIST), 1 Oryong-dong, Buk-gu, Kwangju, 500-712, Korea ; Jo, S.J. ; Kim, J.W. ; Song, J.I.

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Deep levels in Si-doped In0.49Ga0.51P grown by compound-source molecular beam epitaxy (MBE) have been investigated by deep level transient spectroscopy. In0.49Ga0.51P samples were grown by compound-source MBE with V/III ratios of 4, 10, and 17. Depending upon the V/III ratio three major deep levels with activation energies of 0.26±0.02, 0.36±0.02, and 0.82±0.05 eV were observed. The effect of thermal annealing on the behavior of deep levels was also investigated. The deep levels in InGaP grown by compound-source MBE showed behavior of phosphorus antisites and related complexes unlike those found in solid-source MBE-grown InGaP that showed behavior of phosphorus vacancies and related complexes. Si-doped InGaP layers grown with a V/III ratio of 4 showed trap concentration and capture cross section as low as 1.38×1014cm-3 and 2.9×10-16cm2, respectively. The results indicate the potential of InGaP grown by compound-source MBE for use in improved low-frequency noise applications. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 8 )