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Boron exhibits anomalous diffusion during the initial phases of ion implant annealing. Boron transient enhanced diffusion is characterized by enhanced tail diffusion coupled with an electrically inactive immobile peak. The immobile peak is due to clustering of boron in the presence of excess interstitials which also enhance boron diffusion in the tail region. We present a simple model for the formation of immobile boron interstitial clusters and associated point defect interactions derived based on atomistic calculations. © 2001 American Institute of Physics.