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Strain effects on As and Sb segregates immersed in annealed GaAs and GaSb by Raman spectroscopy

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2 Author(s)
Campos, C.E.M. ; Departmento de Fı´sica, Universidade Federal de São Carlos, C. P. 676, 13 565-905 São Carlos, SP, Brazil ; Pizani, P.S.

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Raman scattering was used to obtain information about residual strains on As and Sb segregates immersed in GaAs and GaSb annealed at high temperatures. Eg and A1g modes of As and Sb in annealed GaAs and GaSb Raman spectra showed that the segregates are in the crystalline phase. Tensile stresses on As segregates were evident, while the Sb segregates were found to be practically relaxed. The temperature dependence of the stresses on segregates were determined. The different annealing temperatures used in this work were found to not cause substantial changes in stresses on segregates. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 7 )

Date of Publication:

Apr 2001

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