By Topic

A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)
Uedono, A. ; Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan ; Muramatsu, Makoto ; Ubukata, Tomohiro ; Watanabe, Masahito
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Vacancy-type defects introduced by the carburization of Si were studied by means of monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation were measured for Si substrates with carbon films at temperatures between 298 and 1473 K. The line-shape parameter S, which corresponds to the annihilation of positrons near the interface between the carbon film and the Si substrate, started to increase above 1173 K. This was attributed to the trapping of positrons by vacancy-type defects introduced by carburization. The major species of the defects detected by positron annihilation was identified to be vacancy clusters in the Si substrate. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 7 )