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A model for the segregation and pileup of boron at the SiO2/Si interface during the formation of ultrashallow p+ junctions

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7 Author(s)
Shima, A. ; Device Development Center, Hitachi, Ltd., 6-16-3 Shinmachi, Ome, Tokyo, 198-8512, Japan ; Jinbo, Tomoko ; Natsuaki, Nobuyoshi ; Ushio, Jiro
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We have quantitatively investigated how boron segregates to regions close to the surface, and what controls this phenomenon, using x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and backside secondary ion mass spectrometry measurement techniques. We found that, contrary to the equilibrium segregation, the pileup of boron is mainly on and within 0.6 nm of the Si side of the interface, and that there is no difference between the kind of encapsulation. This also suggests that the pileup of boron is mainly on the Si side, and implies that the main factor in this segregation is the existence of the Si surface. From the viewpoint of device fabrication, this result seems to be useful in terms of the fabrication of sidewalls. The possibility of boron pileup to occurring in the interstitial state was also shown. Our results suggested a way of looking at dopant profiles by predictive computer modeling. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 6 )