Cart (Loading....) | Create Account
Close category search window

Charge centers induced in thermal SiO2 films by high electric field stress at 80 K

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Fujieda, S. ; Silicon Systems Research Laboratories, System Devices and Fundamental Research, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Charge centers induced in wet and dry SiO2 films by high electric field stress [Fowler–Nordheim (FN) stress] at 80 K were characterized. The gate current of wet oxides was found to increase steeply during the FN-stress application at 80 K. In contrast, the gate current of dry oxides increased little. The thermally stimulated current of the oxides stressed by a high electric field and that of oxides irradiated with vacuum-ultraviolet light were measured. The measurements revealed one negative charge center (tr-1) and three positive charge centers (tr-2–tr-4) in the temperature range of 80–350 K. Their activation energies were estimated to be 0.26 eV (tr-1), 0.50 eV (tr-2), 0.60 eV (tr-3), and 0.86 eV (tr-4). The wet oxides were found to have a higher density of charge centers than the dry oxides. In particular, positive charge center tr-3 was characteristic of the wet oxides. The steep increase in the gate current of the wet oxides during the application of FN stress is attributed to tr-3. This center appears to be related to H+. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 6 )

Date of Publication:

Mar 2001

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.