Cart (Loading....) | Create Account
Close category search window
 

Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Donovan, K. ; Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom ; Harrison, P. ; Kelsall, R.W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1341216 

The carrier transition rates and subband populations for a GaAs/AlGaAs quantum cascade laser operating in the mid-infrared frequency range are calculated by solving the rate equations describing the electron densities in each subband self-consistently. These calculations are repeated for a range of temperatures from 20 to 300 K. The lifetime of the upper laser level found by this self-consistent method is then used to calculate the gain for this range of temperatures. At a temperature of 77 K, the gain of the laser is found to be 34 cm-1/(kA/cm-2), when only electron–longitudinal-optical phonon transitions are considered in the calculation. The calculated gain decreases to 19.6 cm-1/(kA/cm-2) when electron–electron transition rates are included, thus showing their importance in physical models of these devices. Further analysis shows that thermionic emission could be occurring in real devices. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 6 )

Date of Publication:

Mar 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.