By Topic

Stark effect and single-electron charging in silicon nanocrystal quantum dots

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Thean, A. ; Department of Electrical and Computer Engineering, Beckman Institute for Advanced Science and Technology and Coordinated Science Laboratory University of Illinois, Urbana, Illinois 61801 ; Leburton, J.P.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In this article, we investigate numerically the electronic structure of semispherical nanocrystals in quantum-dot based flash memory devices. We model three different sizes of nanocrystals with diameters of 125, 70, and 50 Å by solving self-consistently a system of three-dimensional (3D) Kohn–Sham and Poisson equations. We show that the unique combination of symmetries in the bandstructure and the 3D confinement geometry produce Stark effects with energy-level crossings in the nanocrystals. We also show that the quantum states in large nanocrystals (125 Å diameter) respond markedly different to the applied control-gate electric field compared to the smaller nanocrystals (diameter ≪70 Å). Finally, we simulate single-electron charging and obtain the addition energy spectrum of the 125-Å-diam nanocrystal. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:89 ,  Issue: 5 )