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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:89 Issue:4 Help

Existence of a CuAu–I-type ordered structure in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells

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5 Author(s)
Kim, T.W. ; Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea ; Lee, D.U. ; Lee, H.S. ; Lee, J.Y.
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Selected area electron diffraction pattern (SADP) and transmission electron microscopy (TEM) measurements were carried out to investigate the ordered structures in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells (MQWs). The SADP showed two sets of extra spots with asymmetrical intensity, and the high-resolution TEM image showed doublet periodicity in the contrast of the (001) lattice planes. The results of the SADP and the TEM measurements showed that a CuAu–I-type ordered structure was observed near the lattice-mismatched InxGa1-xAs/InyAl1-yAs heterointerfaces. This CuAu–I-type ordered structure had an antiphase boundary in the periodically regular InxGa1-xAs/InyAl1-yAs lattice-mismatched region. The existence of a CuAu–I-type ordered structure in InxGa1-xAs/InyAl1-yAs MQWs might originate from the lattice mismatch between the InxGa1-xAs and the InyAl1-yAs layers. These results provide important information on the microstructural properties for improving operating efficiencies in long-wavelength optoelectronic devices, such as strain compensated electroabsorption modulators utilizing lattice-mismatched InxGa1-xAs/InyAl1-yAs MQWs. © 2001 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:89 ,  Issue: 4 )

Date of Publication: Feb 2001

Page(s):
2503 - 2505
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.1337917
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Feb 2001
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