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Direct observation of void morphology in step-like electromigration resistance behavior and its correlation with critical current density

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3 Author(s)
Huang, J.S. ; Bell Laboratories, Lucent Technologies, 9333 South John Young Parkway, Orlando, Florida 32819 ; Shofner, T.L. ; Zhao, J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1340004 

Electromigration-induced resistance behavior of via-terminated metal lines was studied. We found a strong correlation between void morphology and step-like resistance behavior. For the lines which exhibit pronounced resistance steps, voids are formed at the top or bottom Al/TiN interface. For the lines which exhibit gradual resistance increases, only complete void formation severing the whole line occurs. The step-like resistance behavior is more pronounced when the current density is close to the critical current density. Possible mechanisms for the resistance steps are discussed. © 2001 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:89 ,  Issue: 4 )

Date of Publication: Feb 2001

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