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Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP

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8 Author(s)
Schramm, C. ; Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany ; Schlaak, W. ; Mekonnen, G.G. ; Passenberg, W.
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The successful fabrication of AlInAs/GaInAs HEMTs, regrown by MBE on patterned optical waveguide surfaces after the local removal of a previously grown photodiode layer stack, is reported. The devices are part of a distributed amplifier within an integrated optoelectronic receiver intended to operate at a 1.55 μm wavelength and at bit rates of 20 and/or 40 Gbit/s. The performance of the HEMTs is highly comparable to reference devices grown on planar surfaces

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Electronics Letters  (Volume:32 ,  Issue: 12 )